A cell theory for stage IV work hardening of metals and semiconductors
نویسنده
چکیده
2014 Work hardening of fcc metals and diamond structure crystals is considered in a cell model. Depending on stacking fault energy and temperature dynamic recovery can occur by cross slip or climb. The remaining dislocations cause a rehardening stage IV of two different origins and in two temperature ranges before the other dynamic recovery mechanism terminates work hardening. J. Phys. France 50 (1989) 2445-2454 15 SEPTEMBRE 1989, Classification Physics Abstracts 61.70G 46.30J 62.30 81.40
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